LED with GN group constituting

LED with GN group constituting the device, because it is a wide band gap semiconductor material, MR16 LED Lamp its resistivity is higher, for the InGaN / AlGaN / GaN double heterostructure blue light LED, the thickness of the active layer of InGaN is generally only a few than 10 nm, and then  8mm LED Flexi as a result of such an LED two positive, a negative electrode the same surface of the chip, the distance between the small, if the both ends of the electrostatic charge accumulated to a certain value, this electrostatic voltage will PN breakdown, so leakage increases, the PN junction serious puncture short LED failure. 10mm LED Flexi

Precisely because of the existence of electrostatic threat, for the above-mentioned structure of the LED chip and device processing to processing plants, machinery, tools, equipment, staff clothing to take anti-static measures to ensure that does not damage the LED. In addition, in the packaging of chips and devices should adopt an anti-static material. LED Lighting china