Then this can be reduced

Then this can be reduced to introduce loss of light emitting diode substrate, a metal reflection film layer, high luminance, luminous efficiency of a conventional light emitting diode structure 4 times, 48 lm / W of AlGaInP 4 元 red light emitting efficiency of the light emitting diode Improvement approach, and metal reflection film light-emitting diode (MR-led) of electro-optical, and other properties. LED Downlight

History

LED Downlight

Traditional red light-emitting diode semiconductor wafers, in addition to AlGaAs epitaxial silicon (Epitaxial wafer) than, AlGaInP epitaxial silicon wafers have been commercialized.

  GU10 

If the AlGaInP epitaxial silicon wafer surface, and then cut to produce grain-like electrode (Die), the light-emitting diode chip can be made, but the light emitting diodes by the conventional structure of the base substrate, the light absorption loss is very large, generally considered 12 lm / W was a red light emitting diode emitting efficiency is a maximum limit.